2SC3324-BL(T

2SC3324-BL(TE85L,F vs 2SC3324-BL(TE85LFCT-ND vs 2SC3324-BL(TE85LFDKR-ND

 
PartNumber2SC3324-BL(TE85L,F2SC3324-BL(TE85LFCT-ND2SC3324-BL(TE85LFDKR-ND
DescriptionBipolar Transistors - BJT NPN 0.1A IC 120V Gen Purp Trans
ManufacturerToshiba--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-346-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max120 V--
Collector Base Voltage VCBO120 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.3 V--
Maximum DC Collector Current100 mA--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 125 C--
Series2SC3324--
DC Current Gain hFE Max700--
PackagingReel--
BrandToshiba--
Continuous Collector Current100 mA--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000423 oz--
製造商 型號 描述 RFQ
Toshiba
Toshiba
2SC3324-BL(TE85L,F Bipolar Transistors - BJT NPN 0.1A IC 120V Gen Purp Trans
2SC3324-BL(TE85L,F Bipolar Transistors - BJT NPN 0.1A IC 120V Gen Purp Trans
2SC3324-BL(TE85LFCT-ND 全新原裝
2SC3324-BL(TE85LFDKR-ND 全新原裝
2SC3324-BL(TE85LFTR-ND 全新原裝
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