| PartNumber | 2SC3326-A,LF | 2SC3326-B,LF | 2SC3326-A(TE85L,F) |
| Description | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | Bipolar Transistors - BJT Transistor for Low Freq. Amplification | Bipolar Transistors - BJT NPN 0.3A IC 20V Gen Purp Trans |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-236-3 | TO-236-3 | SOT-346-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 20 V | 20 V | 20 V |
| Collector Base Voltage VCBO | 50 V | 50 V | 50 V |
| Emitter Base Voltage VEBO | 25 V | 25 V | 25 V |
| Collector Emitter Saturation Voltage | 42 mV | 42 mV | 0.042 V |
| Maximum DC Collector Current | 300 mA | 300 mA | 300 mA |
| Gain Bandwidth Product fT | 30 MHz | 30 MHz | 30 MHz |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Series | 2SC3326 | 2SC3326 | 2SC3326 |
| DC Current Gain hFE Max | 1200 | 1200 | 1200 |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| DC Collector/Base Gain hfe Min | 200 | 200 | 200 |
| Pd Power Dissipation | 150 mW | 150 mW | 150 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000423 oz | 0.000423 oz | - |
| Continuous Collector Current | - | - | 300 mA |