2SC5551AE-TD-E vs 2SC5551AF-TD-E vs 2SC5551AF-TD-E/2SC5551AE

PartNumber	2SC5551AE-TD-E	2SC5551AF-TD-E	2SC5551AF-TD-E/2SC5551AE
Description	Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz	RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	RF Bipolar Transistors	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	PCP-3	PCP-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	30 V	30 V	-
Collector Base Voltage VCBO	40 V	-	-
Emitter Base Voltage VEBO	2 V	2 V	-
Collector Emitter Saturation Voltage	0.3 V	-	-
Maximum DC Collector Current	300 mA	-	-
Gain Bandwidth Product fT	3.5 GHz	-	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	2SC5551A	2SC5551A	-
DC Current Gain hFE Max	270	-	-
Packaging	Reel	Reel	-
Brand	ON Semiconductor	ON Semiconductor	-
Continuous Collector Current	300 mA	300 mA	-
Pd Power Dissipation	1.3 W	1.3 W	-
Product Type	BJTs - Bipolar Transistors	RF Bipolar Transistors	-
Factory Pack Quantity	1000	1000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.001804 oz	0.001804 oz	-
Transistor Type	-	Bipolar	-
Technology	-	Si	-
DC Collector/Base Gain hfe Min	-	90	-
Minimum Operating Temperature	-	- 55 C	-

• 從...開始
• 2SC5551A 3
• 2SC5551 5
• 2SC555 8
• 2SC55 96
• 2SC5 1341
• 2SC 6344

Search Part Number : "2SC5551A", Match & Start with "2SC5551A" - Total : 5

製造商	型號	描述	RFQ
	2SC5551AE-TD-E	Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz	RFQ
	2SC5551AF-TD-E	RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz	RFQ
	2SC5551AF-TD-E/2SC5551AE	全新原裝	RFQ
ON Semiconductor	2SC5551AE-TD-E	Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz	RFQ
	2SC5551AF-TD-E	RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz	RFQ