2SC5707

2SC5707-E vs 2SC5707 vs 2SC5707,C5707

 
PartNumber2SC5707-E2SC57072SC5707,C5707
DescriptionBipolar Transistors - BJT BIP NPN 8A 50VBipolar Junction Transistor, NPN Type, TO-251VAR
ManufacturerON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage160 mV, 110 mV--
Maximum DC Collector Current11 A--
Gain Bandwidth Product fT330 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2SC5707--
PackagingBulk--
BrandON Semiconductor--
Continuous Collector Current8 A--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation15 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity500--
SubcategoryTransistors--
Unit Weight0.139332 oz--
製造商 型號 描述 RFQ
2SC5707-E Bipolar Transistors - BJT BIP NPN 8A 50V
2SC5707-TL-E Bipolar Transistors - BJT BIP NPN 8A 50V
2SC5707 Bipolar Junction Transistor, NPN Type, TO-251VAR
2SC5707,C5707 全新原裝
2SC5707-G-E 全新原裝
2SC5707-SHY-TL 全新原裝
2SC5707-TL 全新原裝
2SC5707T 全新原裝
ON Semiconductor
ON Semiconductor
2SC5707-TL-E Bipolar Transistors - BJT BIP NPN 8A 50V
2SC5707-E Bipolar Transistors - BJT BIP NPN 8A 50V
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