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| PartNumber | 2SK3320-BL(TE85L,F | 2SK3314(Q) |
| Description | JFET Junction FET N-Ch x2 1.2V to 14mA 10mA | MOSFET N-ch 500V 20A 0.480 ohm |
| Manufacturer | Toshiba | Toshiba |
| Product Category | JFET | MOSFET |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | Through Hole |
| Package / Case | USV-5 | TO-3PN-3 |
| Transistor Polarity | N-Channel | N-Channel |
| Configuration | Dual | Single |
| Vds Drain Source Breakdown Voltage | 10 V | 500 V |
| Vgs Gate Source Breakdown Voltage | - 30 V | - |
| Drain Source Current at Vgs=0 | 6 mA | - |
| Id Continuous Drain Current | 14 mA | 15 A |
| Pd Power Dissipation | 200 mW | 150 W |
| Series | 2SK3320 | 2SK3314 |
| Packaging | Reel | - |
| Type | JFET | - |
| Brand | Toshiba | Toshiba |
| Gate Source Cutoff Voltage | - 1.5 V | - |
| Factory Pack Quantity | 3000 | 50 |
| Technology | - | Si |
| Number of Channels | - | 1 Channel |
| Rds On Drain Source Resistance | - | 490 mOhms |
| Vgs Gate Source Voltage | - | 30 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Height | - | 20 mm |
| Length | - | 15.5 mm |
| Transistor Type | - | 1 N-Channel |
| Width | - | 4.5 mm |
| Fall Time | - | 65 ns |
| Product Type | - | MOSFET |
| Rise Time | - | 50 ns |
| Subcategory | - | MOSFETs |
| Unit Weight | - | 0.245577 oz |
