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| PartNumber | APT45GP120J | APT45GP120JDQ2 |
| Description | IGBT Transistors FG, IGBT, 1200V, 45A, SOT-227 | IGBT Transistors FG, IGBT-COMBI, 1200V, 45A, SOT-227 |
| Manufacturer | Microchip | Microchip |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | SOT-227-4 | - |
| Mounting Style | Chassis Mount | - |
| Configuration | N-Channel | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | - |
| Collector Emitter Saturation Voltage | 3.3 V | - |
| Maximum Gate Emitter Voltage | 20 V | - |
| Continuous Collector Current at 25 C | 34 A | - |
| Pd Power Dissipation | 329 W | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 75 A | - |
| Height | 9.6 mm | - |
| Length | 38.2 mm | - |
| Operating Temperature Range | - 55 C to + 150 C | - |
| Width | 25.4 mm | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi |
| Continuous Collector Current | 75 A | - |
| Gate Emitter Leakage Current | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 |
| Subcategory | IGBTs | IGBTs |
| Tradename | POWER MOS 7 IGBT, ISOTOP | - |
| Unit Weight | 1.058219 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT45GP120J | IGBT Transistors FG, IGBT, 1200V, 45A, SOT-227 | |
| APT45GP120JDQ2 | IGBT Transistors FG, IGBT-COMBI, 1200V, 45A, SOT-227 | ||
| APT45GP120J | IGBT Transistors | ||
| APT45GP120JDQ2 | Trans IGBT Chip N-CH 1.2KV 75A 4-Pin SOT-227 | ||
| APT45GP120JDF2 | 全新原裝 |