 |  | | |
| PartNumber | APT54GA60B | APT54GA60BD30 | APT54GA60BD15 |
| Description | IGBT Transistors FG, IGBT, 600V, TO-247 | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247 | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |
| Package / Case | - | TO-247-3 | - |
| Mounting Style | - | Through Hole | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 600 V | - |
| Collector Emitter Saturation Voltage | - | 2 V | - |
| Maximum Gate Emitter Voltage | - | 30 V | - |
| Continuous Collector Current at 25 C | - | 96 A | - |
| Pd Power Dissipation | - | 416 W | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Continuous Collector Current Ic Max | - | 96 A | - |
| Height | - | 4.69 mm | - |
| Length | - | 10.8 mm | - |
| Operating Temperature Range | - | - 55 C to + 150 C | - |
| Width | - | 15.49 mm | - |
| Gate Emitter Leakage Current | - | +/- 100 nA | - |
| Unit Weight | - | 1.340411 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT54GA60B | IGBT Transistors FG, IGBT, 600V, TO-247 | |
| APT54GA60BD30 | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247 | ||
| APT54GA60BD15 | 全新原裝 |