 | | | |
| PartNumber | APTGT50DDA120T3G | APTGT50DDA60T3G | APTGT50DDA120T3G IGB |
| Description | IGBT Modules CC3089 | IGBT Modules DOR CC3175 | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | - |
| Collector Emitter Saturation Voltage | 1.7 V | 1.5 V | - |
| Continuous Collector Current at 25 C | 75 A | 80 A | - |
| Gate Emitter Leakage Current | 400 nA | 600 nA | - |
| Pd Power Dissipation | 270 W | 176 W | - |
| Package / Case | SP3F-32 | SP3-32 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 125 C | + 100 C | - |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 3.880136 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT50DDA120T3G | IGBT Modules CC3089 | |
| APTGT50DDA60T3G | IGBT Modules DOR CC3175 | ||
| APTGT50DDA120T3G | Trans IGBT Module N-CH 1.2KV 75A 32-Pin Case SP-3 | ||
| APTGT50DDA120T3G IGB | 全新原裝 |