 | | | |
| PartNumber | APTGT50H60T3G | APTGT50H60T1G | APTGT50H60RT3G |
| Description | IGBT Modules CC3041 | IGBT Modules DOR CC8040 | IGBT Modules DOR CC3126 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Full Bridge | Full Bridge | Full Bridge |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | 1.5 V |
| Continuous Collector Current at 25 C | 80 A | 80 A | 80 A |
| Gate Emitter Leakage Current | 600 nA | 600 nA | 600 nA |
| Pd Power Dissipation | 176 W | 176 W | 176 W |
| Package / Case | SP3-32 | SP1-12 | SP3-32 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | - | 2.821917 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT50H60T3G | IGBT Modules CC3041 | |
| APTGT50H60T1G | IGBT Modules DOR CC8040 | ||
| APTGT50H60RT3G | IGBT Modules DOR CC3126 |