 |  | | |
| PartNumber | AS6C6416-55TIN | AS6C6416-55BIN | AS6C6416-55BINTR |
| Description | SRAM 64M 3V 55ns Low Power 4048k x 16 | SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT | SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT |
| Manufacturer | Alliance Memory | Alliance Memory | Alliance Memory |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | Y |
| Memory Size | 64 Mbit | 64 Mbit | 64 Mbit |
| Organization | 4 M x 16 | 4 M x 16 | 4 M x 16 |
| Access Time | 55 ns | 55 ns | 55 ns |
| Interface Type | Parallel | Parallel | Parallel |
| Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
| Supply Voltage Min | 2.7 V | 2.7 V | 2.7 V |
| Supply Current Max | 20 mA | 20 mA | 20 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-48 | FBGA-48 | FBGA-48 |
| Packaging | Tray | Tray | Reel |
| Memory Type | Volatile | - | - |
| Series | AS6C6416-55 | AS6C6416-55 | AS6C6416-55 |
| Type | Low Power CMOS | Asynchronous | Asynchronous |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 96 | 220 | 2000 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Alliance Memory |
AS6C6416-55TIN | SRAM 64M 3V 55ns Low Power 4048k x 16 | |
| AS6C6416-55BIN | SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT | ||
| AS6C6416-55BINTR | SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT | ||
| AS6C6416-55TINTR | SRAM 64M 3V 55ns Low Power 4048k x 16 | ||
| AS6C6416-55BIN | IC SRAM 64M PARALLEL 48TFBGA | ||
| AS6C6416-55BINTR | IC SRAM 64M PARALLEL 48TFBGA |