OMO ElectronicOMO Electronic
Expand menu
0 購物車

AS6C8016-5

AS6C8016-55BIN vs AS6C8016-55BINTR vs AS6C8016-55BIN*

 
PartNumberAS6C8016-55BINAS6C8016-55BINTRAS6C8016-55BIN*
DescriptionSRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAMSRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAMSRAM
ManufacturerAlliance MemoryAlliance MemoryAlliance Memory
Product CategorySRAMSRAMSRAM
RoHSYY-
Memory Size8 Mbit8 Mbit-
Organization512 k x 16512 k x 16-
Access Time55 ns55 ns-
Interface TypeParallelParallel-
Supply Voltage Max5.5 V5.5 V-
Supply Voltage Min2.7 V2.7 V-
Supply Current Max60 mA60 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 85 C+ 85 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTBGA-48TBGA-48-
PackagingTrayReelTray
Memory TypeSDRSDR-
SeriesAS6C8016AS6C8016AS6C8016
TypeAsynchronousAsynchronous-
BrandAlliance MemoryAlliance MemoryAlliance Memory
Moisture SensitiveYesYes-
Product TypeSRAMSRAMSRAM
Factory Pack Quantity4802000480
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Unit Weight0.014004 oz--
製造商 型號 描述 RFQ
Alliance Memory
Alliance Memory 		AS6C8016-55TIN SRAM 8M L-Power, 2.7-3.6V 512k x 16, 48pin
AS6C8016-55BIN SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
AS6C8016-55ZIN SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
AS6C8016-55BINTR SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
AS6C8016-55ZINTR SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
AS6C8016-55TINTR SRAM 8M L-Power, 2.7-3.6V 512k x 16, 48pin
AS6C8016-55BINTR* SRAM
AS6C8016-55BIN* SRAM
AS6C8016-55TINTR SRAM 8M L-Power 2.7-3.6V 512k x 16 48pin
AS6C8016-55TIN SRAM 8M L-Power, 2.7-3.6V 512k x 16, 48pin
AS6C8016-55BINTR SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
AS6C8016-55ZINTR SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
AS6C8016-55BIN IC SRAM 8M PARALLEL 48TFBGA
AS6C8016-55ZIN SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
Top