| PartNumber | ATF-36163-BLKG | ATF-36163-TR2G | ATF-36163-TR1G |
| Description | RF JFET Transistors Transistor GaAs High Frequency | RF JFET Transistors Transistor GaAs High Frequency | RF JFET Transistors Transistor GaAs High Frequency |
| Manufacturer | Broadcom Limited | AVAGO | AVAGO |
| Product Category | RF JFET Transistors | RF FETs | RF FETs |
| RoHS | Y | - | - |
| Transistor Type | pHEMT | - | pHEMT |
| Technology | GaAs | - | GaAs |
| Gain | 10 dB | - | 10 dB |
| Vds Drain Source Breakdown Voltage | 3 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
| Id Continuous Drain Current | 40 mA | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 180 mW | - | - |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-363 | - | - |
| Packaging | Bulk | - | Reel |
| Configuration | Single Quad Source | - | Single Quad Source |
| Operating Frequency | 12 GHz | - | 12 GHz |
| Product | RF JFET | - | - |
| Type | GaAs pHEMT | - | - |
| Brand | Broadcom / Avago | - | - |
| Forward Transconductance Min | 60 mS | - | - |
| NF Noise Figure | 12 dB | - | - |
| P1dB Compression Point | 5 dBm | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 100 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000212 oz | - | 0.000212 oz |
| Package Case | - | - | SOT-363 |
| Pd Power Dissipation | - | - | 180 mW |
| Id Continuous Drain Current | - | - | 40 mA |
| Vds Drain Source Breakdown Voltage | - | - | 3 V |
| Forward Transconductance Min | - | - | 60 mS |
| Vgs Gate Source Breakdown Voltage | - | - | - 3 V |
| NF Noise Figure | - | - | 12 dB |
| P1dB Compression Point | - | - | 5 dBm |