AUIRF1404ST

AUIRF1404STRL vs AUIRF1404STRR vs AUIRF1404STRLPBF

 
PartNumberAUIRF1404STRLAUIRF1404STRRAUIRF1404STRLPBF
DescriptionMOSFET AUTO 40V 1 N-CH HEXFET 4mOhmsRF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current162 A--
Rds On Drain Source Resistance4 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge160 nC--
Minimum Operating Temperature- 55 C- 55 C-
Pd Power Dissipation200 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon Technologies--
Fall Time26 ns26 ns-
Product TypeMOSFET--
Rise Time140 ns140 ns-
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns72 ns-
Typical Turn On Delay Time17 ns17 ns-
Part # AliasesSP001517298--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-200 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-162 A-
Vds Drain Source Breakdown Voltage-40 V-
Rds On Drain Source Resistance-4 mOhms-
Qg Gate Charge-160 nC-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
AUIRF1404STRL MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
AUIRF1404STRR RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
AUIRF1404STRL MOSFET N-CH 40V 202A D2PAK
AUIRF1404STRLPBF 全新原裝
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