| PartNumber | BC817K25WH6433XTMA1 | BC817K25WH6327XTSA1 | BC817K25WE6327HTSA1 |
| Description | Bipolar Transistors - BJT NPN Silicon AF Transistor | Bipolar Transistors - BJT AF TRANSISTOR | TRANS NPN 45V 0.5A SOT-323 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-323-3 | SOT-323-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
| Collector Base Voltage VCBO | 50 V | 50 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 0.7 V | 0.7 V | - |
| Maximum DC Collector Current | 1000 mA | 1000 mA | - |
| Gain Bandwidth Product fT | 170 MHz | 170 MHz | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BC817 | BC817 | - |
| DC Current Gain hFE Max | 400 at 100 mA, 1 V | 400 at 100 mA, 1 V | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Continuous Collector Current | 500 mA | 500 mA | - |
| DC Collector/Base Gain hfe Min | 160 at 100 mA, 1 V | 160 at 100 mA, 1 V | - |
| Pd Power Dissipation | 250 mW | 250 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 10000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 817K-25W BC BC817K25WH6433XT H6433 SP000786166 | 817K-25W BC BC817K25WH6327XT H6327 SP000746848 | - |
| Unit Weight | 0.000176 oz | 0.000176 oz | - |