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| PartNumber | BC856SH6327XTSA1 | BC856SH6327 |
| Description | Bipolar Transistors - BJT AF TRANSISTOR | Transistor: PNP x2, bipolar, 65V, 100mA, 250mW, SOT363 |
| Manufacturer | Infineon | Infineon Technologies |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Arrays |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-363-6 | - |
| Transistor Polarity | PNP | - |
| Configuration | Dual | - |
| Collector Emitter Voltage VCEO Max | 65 V | - |
| Collector Base Voltage VCBO | 80 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 250 mV | - |
| Maximum DC Collector Current | 200 mA | - |
| Gain Bandwidth Product fT | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | BC856 | BC856 |
| DC Current Gain hFE Max | 630 | - |
| Packaging | Reel | Tape & Reel (TR) |
| Brand | Infineon Technologies | - |
| Continuous Collector Current | 100 mA | - |
| DC Collector/Base Gain hfe Min | 200 | - |
| Pd Power Dissipation | 250 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 856S BC BC856SH6327XT H6327 SP000747446 | - |
| Unit Weight | 0.000265 oz | - |
| Part Aliases | - | 856S BC BC856SH6327XT H6327 SP000747446 |
| Package Case | - | SOT-363-6 |
| Mounting Type | - | Surface Mount |
| Supplier Device Package | - | PG-SOT363-6 |
| Power Max | - | 250mW |
| Transistor Type | - | 2 PNP (Dual) |
| Current Collector Ic Max | - | 100mA |
| Voltage Collector Emitter Breakdown Max | - | 65V |
| DC Current Gain hFE Min Ic Vce | - | 200 @ 2mA, 5V |
| Vce Saturation Max Ib Ic | - | 650mV @ 5mA, 100mA |
| Current Collector Cutoff Max | - | 15nA (ICBO) |
| Frequency Transition | - | 250MHz |