 | | |
| PartNumber | BC857SH6327XTSA1 | BC857SH6327XT |
| Description | Bipolar Transistors - BJT AF TRANSISTOR | Bipolar Transistors - BJT AF TRANSISTOR |
| Manufacturer | Infineon | Infineon |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 |
| Transistor Polarity | PNP | PNP |
| Configuration | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V |
| Collector Base Voltage VCBO | 50 V | 50 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 250 mV | 250 mV |
| Maximum DC Collector Current | 200 mA | 200 mA |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | BC857 | - |
| DC Current Gain hFE Max | 630 | 630 |
| Packaging | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies |
| Continuous Collector Current | 100 mA | 100 mA |
| DC Collector/Base Gain hfe Min | 200 | 200 |
| Pd Power Dissipation | 250 mW | 250 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | 857S BC BC857SH6327XT H6327 SP000747456 | 857S BC BC857SH6327XTSA1 H6327 SP000747456 |
| Unit Weight | 0.000265 oz | 0.000265 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BC857SH6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTOR | |
| BC857SH6327XT | Bipolar Transistors - BJT AF TRANSISTOR | ||
| BC857SH6327XTSA1 | TRANS 2PNP 45V 0.1A SOT363 | ||
| BC857SH6327XT | Bipolar Transistors - BJT AF TRANSISTOR |