BC858B-7

BC858B-7-F vs BC858B-7 vs BC858B-7 , SC4509WLTRT ,

 
PartNumberBC858B-7-FBC858B-7BC858B-7 , SC4509WLTRT ,
DescriptionBipolar Transistors - BJT PNP BIPOLAR
ManufacturerDiodes IncorporatedDIODES-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 30 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 650 mV--
Maximum DC Collector Current- 200 mA--
Gain Bandwidth Product fT200 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesBC858--
Height1 mm--
Length3.05 mm--
PackagingReel--
Width1.4 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min220 at -2 mA, - 5 V--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
BC858B-7-F Bipolar Transistors - BJT PNP BIPOLAR
BC858B-7-F Bipolar Transistors - BJT PNP BIPOLAR
BC858B-7 全新原裝
BC858B-7 , SC4509WLTRT , 全新原裝
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