 |  | |
| PartNumber | BCR133E6327XT | BCR133E6327HTSA1 |
| Description | Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA | Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA |
| Manufacturer | Infineon | Infineon |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y |
| Transistor Polarity | NPN | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23 | SOT-23-3 |
| DC Collector/Base Gain hfe Min | 30 | - |
| Collector Emitter Voltage VCEO Max | 50 V | - |
| Continuous Collector Current | 100 mA | - |
| Pd Power Dissipation | 200 mW | - |
| Maximum Operating Temperature | + 150 C | - |
| Packaging | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | 133 BCR BCR133E6327HTSA1 E6327 SP000010757 | 133 BCR BCR133E6327XT E6327 SP000010757 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| Series | - | BCR133 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BCR133E6327XT | Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA | |
| BCR133E6327HTSA1 | Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA | ||
| BCR133E6327XT | Bipolar Transistors - Pre-Biased AF TRANS DIGITAL BJT NPN 50V 100MA | ||
| BCR133E6327HTSA1 | TRANS PREBIAS NPN 200MW SOT23-3 | ||
| BCR133E6327 | DIGITAL TRANSISTOR NPN 100MA 10K SOT23, PK | ||
| BCR133E6327HTSA1-CUT TAPE | 全新原裝 |