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| PartNumber | BCR35PNH6327XTSA1 | BCR35PNH6327 |
| Description | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | Transistor: NPN / PNP, bipolar, BRT, complementary, 50V, 100mA |
| Manufacturer | Infineon | Infineon Technologies |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Arrays, Pre-Biased |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | - |
| Series | BCR35 | BCR35 |
| Packaging | Reel | Digi-ReelR Alternate Packaging |
| Brand | Infineon Technologies | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 35PN BCR BCR35PNH6327XT H6327 SP000757922 | - |
| Unit Weight | 0.000265 oz | 0.000265 oz |
| Part Aliases | - | 35PN BCR BCR35PNH6327XT H6327 SP000757922 |
| Package Case | - | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | - | Surface Mount |
| Supplier Device Package | - | PG-SOT363-6 |
| Power Max | - | 250mW |
| Transistor Type | - | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current Collector Ic Max | - | 100mA |
| Voltage Collector Emitter Breakdown Max | - | 50V |
| Resistor Base R1 Ohms | - | 10k |
| Resistor Emitter Base R2 Ohms | - | 47k |
| DC Current Gain hFE Min Ic Vce | - | 70 @ 5mA, 5V |
| Vce Saturation Max Ib Ic | - | 300mV @ 500μA, 10mA |
| Current Collector Cutoff Max | - | - |
| Frequency Transition | - | 150MHz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BCR35PNH6327XTSA1 | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR | |
| BCR35PNH6327XTSA1 | TRANS NPN/PNP PREBIAS SOT363 | ||
| BCR35PNH6327 | Transistor: NPN / PNP, bipolar, BRT, complementary, 50V, 100mA |