 |  |  | |
| PartNumber | BFQ 19S H6327 | BFQ 19S E6327 | BFQ 19S |
| Description | Bipolar Transistors - BJT RF BIP TRANSISTORS | Bipolar Transistors - BJT NPN Silicon RF TRANSISTOR | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-89-4 | SOT-89-4 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 15 V | 15 V | - |
| Collector Base Voltage VCBO | 20 V | 20 V | - |
| Emitter Base Voltage VEBO | 3 V | 3 V | - |
| Gain Bandwidth Product fT | 5.5 GHz | 5500 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BFQ19 | BFQ19 | - |
| DC Current Gain hFE Max | 140 | - | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Continuous Collector Current | 120 mA | 0.21 A | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Pd Power Dissipation | 1 W | 1000 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BFQ19SH6327XTSA1 SP001125294 | BFQ19SE6327HTSA1 SP000011042 | - |
| Unit Weight | 0.000353 oz | - | - |
| Maximum DC Collector Current | - | 0.21 A | - |
| Height | - | 1.5 mm | - |
| Length | - | 4.5 mm | - |
| Width | - | 2.5 mm | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BFQ 19S H6327 | Bipolar Transistors - BJT RF BIP TRANSISTORS | |
| BFQ 19S | 全新原裝 | ||
| BFQ 790 H6327 | 全新原裝 | ||
| BFQ149 , SSC1781Y1 , 12L | 全新原裝 | ||
| BFQ17P | 全新原裝 | ||
| BFQ193E6327 | 全新原裝 | ||
| BFQ19P | 全新原裝 | ||
| BFQ19S | 全新原裝 | ||
| BFQ19S , SSCP005GSB , AW | 全新原裝 | ||
| BFQ19S E6327 | 全新原裝 | ||
| BFQ19S E6327 SOT89-FG | 全新原裝 | ||
| BFQ19S H6327 | NPN RF-Trans. 15V 75mA SOT89 | ||
| BFQ 19S E6327 | Bipolar Transistors - BJT NPN Silicon RF TRANSISTOR | ||
NXP Semiconductors |
BFQ18A,115 | RF Bipolar Transistors NPN 18V 150mA 4GHZ | |
| BFQ149 | RF WIDEBAND TRANSISTOR, PNP, -15V, 5GHZ, | ||
| BFQ149.115 | RF WIDEBAND TRANSISTOR, PNP, -15V, 5GHZ, 3-SOT-89, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-15V, Transition Frequency ft:5GHz, Power Dissipation Pd:1W, DC Collector Current:-1 | ||
| BFQ149115 | 全新原裝 | ||
| BFQ17A | 全新原裝 | ||
| BFQ18A | Bipolar Junction Transistor, NPN Type, SOT-89 | ||
| BFQ18A , MAX9171TA | 全新原裝 | ||
| BFQ18A FF | 全新原裝 | ||
| BFQ18A115 | RF Small Signal Bipolar Transistor 0.15A I(C) 1-Element, S Band, Silicon, NPN | ||
| BFQ18AR | 全新原裝 | ||
| BFQ19 | Bipolar - RF Transistor, NPN, 15 V, 5.5 GHz, 1 W, 100 mA, 80 RoHS Compliant: Yes | ||
| BFQ19+115 | 全新原裝 | ||
| BFQ19115 | 全新原裝 | ||
| BFQ193 | 全新原裝 | ||
| BFQ18A,115 | RF Bipolar Transistors NPN 18V 150mA 4GHZ | ||
Infineon Technologies |
BFQ 19S E6327 | Bipolar Transistors - BJT NPN Silicon RF TRANSISTOR | |
| BFQ | 全新原裝 | ||
| BFQ10 | 全新原裝 | ||
| BFQ11 | 全新原裝 | ||
| BFQ12 | 全新原裝 | ||
| BFQ13 | 全新原裝 | ||
| BFQ131 | 全新原裝 | ||
| BFQ135 | 全新原裝 | ||
| BFQ136 | 全新原裝 | ||
| BFQ15 | 全新原裝 | ||
| BFQ151 | 全新原裝 | ||
| BFQ16 | 全新原裝 | ||
| BFQ161 | 全新原裝 | ||
| BFQ162 | TRANSISTOR | ||
| BFQ163 | 全新原裝 | ||
| BFQ166 | 全新原裝 | ||
| BFQ17 | 全新原裝 | ||
| BFQ18 | 全新原裝 | ||
| BFQ193E-6327 | 全新原裝 | ||
| BFQ19A | 全新原裝 | ||
| BFQ 19S H6327 | Bipolar Transistors - BJT RF BIP TRANSISTORS | ||
| BFQ18A,115-CUT TAPE | 全新原裝 |