 | | |
| PartNumber | BFU550WX | BFU550WF |
| Description | RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor | RF Bipolar Transistors NPN wideband silicon RF transistor |
| Manufacturer | NXP | NXP |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors |
| RoHS | Y | Y |
| Transistor Type | Bipolar Wideband | - |
| Technology | Si | Si |
| Transistor Polarity | NPN | - |
| DC Collector/Base Gain hfe Min | 60 | - |
| Collector Emitter Voltage VCEO Max | 16 V | - |
| Emitter Base Voltage VEBO | 2 V | - |
| Continuous Collector Current | 15 mA | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Configuration | Single | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT323-3 | - |
| Packaging | Reel | Reel |
| Collector Base Voltage VCBO | 24 V | - |
| DC Current Gain hFE Max | 200 | - |
| Operating Frequency | 900 MHz | - |
| Operating Temperature Range | - 40 C to + 150 C | - |
| Type | Wideband RF Transistor | - |
| Brand | NXP Semiconductors | NXP Semiconductors |
| Gain Bandwidth Product fT | 11 GHz | - |
| Maximum DC Collector Current | 80 mA | - |
| Pd Power Dissipation | 450 mW | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors |
| Factory Pack Quantity | 3000 | 10000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | 934067695115 | 934067695135 |
| Unit Weight | 0.000196 oz | 0.000196 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
NXP Semiconductors |
BFU550WX | RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor | |
| BFU550WF | RF Bipolar Transistors NPN wideband silicon RF transistor | ||
| BFU550WF | RF Bipolar Transistors NPN wideband silicon RF transisto | ||
| BFU550WX | RF TRANS NPN 12V 11GHZ SOT323-3 | ||
| BFU550WX-CUT TAPE | 全新原裝 |