 |  | | |
| PartNumber | BFU710F,115 | BFU710F | BFU710F115 |
| Description | RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS | RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF Bipolar Transistors | RF Transistors (BJT) | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Collector Emitter Voltage VCEO Max | 2.8 V | - | - |
| Emitter Base Voltage VEBO | 1 V | - | - |
| Continuous Collector Current | 10 mA | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-343 | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 110 GHz | - | - |
| Type | RF Silicon Germanium | - | - |
| Brand | NXP Semiconductors | - | - |
| Pd Power Dissipation | 136 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 934064613115 | - | - |
| Unit Weight | 0.000235 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
NXP Semiconductors |
BFU710F,115 | RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS | |
| BFU710F | 全新原裝 | ||
| BFU710F115 | RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT | ||
| BFU710F,115 | RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS | ||
| BFU710F,115-CUT TAPE | 全新原裝 |