 |  | |
| PartNumber | BGA825L6SE6327XTSA1 | BGA825L6SE6327 |
| Description | RF Amplifier Silicon Germanium Low Noise Amplifier | |
| Manufacturer | Infineon | - |
| Product Category | RF Amplifier | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TSLP-6 | - |
| Type | RF Silicon Germanium | - |
| Technology | SiGe | - |
| Operating Frequency | 1550 MHz to 1615 MHz | - |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 85 C | - |
| Series | BGA825L6 | - |
| Packaging | Reel | - |
| Brand | Infineon Technologies | - |
| Pd Power Dissipation | 72 mW | - |
| Product Type | RF Amplifier | - |
| Factory Pack Quantity | 15000 | - |
| Subcategory | Wireless & RF Integrated Circuits | - |
| Part # Aliases | 825L6S BGA E6327 SP001012810 | - |
| Unit Weight | 0.007055 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BGA825L6SE6327XTSA1 | RF Amplifier Silicon Germanium Low Noise Amplifier | |
| BGA825L6SE6327 | 全新原裝 | ||
Infineon Technologies |
BGA825L6SE6327XTSA1 | IC AMP GPS 1.55-1.615GHZ TSLP6-3 |