BLL6H1214

BLL6H1214-500 vs BLL6H1214-500112 vs BLL6H1214L-250

 
PartNumberBLL6H1214-500BLL6H1214-500112BLL6H1214L-250
DescriptionLDMOS,RF,500W,1200M-1400MHZ,50V, Drain Source Voltage Vds:100V, Continuous Drain Current Id:45A, Power Dissipation Pd:500W, Operating Frequency Min:1.03GHz, Operating Frequency Max:1.09GHz, RF TBLL6H1214-500/SOT539/TRAY
製造商 型號 描述 RFQ
NXP Semiconductors
NXP Semiconductors
BLL6H1214-500 LDMOS,RF,500W,1200M-1400MHZ,50V, Drain Source Voltage Vds:100V, Continuous Drain Current Id:45A, Power Dissipation Pd:500W, Operating Frequency Min:1.03GHz, Operating Frequency Max:1.09GHz, RF T
BLL6H1214L-250 全新原裝
BLL6H1214LS-250 全新原裝
BLL6H1214-500112 BLL6H1214-500/SOT539/TRAY
BLL6H1214L-250112 Now Ampleon, BLL6H1214L-250, LDMOS L-band radar power transistor, SOT502 (LDMOST)
BLL6H1214LS-25011 全新原裝
BLL6H1214LS-500 全新原裝
BLL6H1214LS-50011 RF Components - Rail/Tube (Alt: BLL6H1214LS-500,11)
BLL6H1214-500,112 RF MOSFET Transistors TRANS L-BAND RADAR LDMOS
BLL6H1214LS-500,11 RF MOSFET Transistors PWR LDMOS TRANSISTOR
BLL6H1214LS-250,11 RF MOSFET Transistors Single 100V 42A 100mOhms
BLL6H1214L-250,112 RF MOSFET Transistors Single 100V 42A 100mOhms
BLL6H1214P2S-250Z RF MOSFET Transistors LDMOS L-band radar power module
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