 |  | | |
| PartNumber | BSB012N03LX3 G | BSB012N03LX3 | BSB012N03LX3G |
| Description | MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3 | - Bulk (Alt: BSB012N03LX3) | Trans MOSFET N-CH 30V 39A 7-Pin WDSON - Bulk (Alt: BSB012N03LX3G) |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | WDSON-2-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 39 A | - | - |
| Rds On Drain Source Resistance | 1.2 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 0.7 mm | - | - |
| Length | 6.35 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.05 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 8.4 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.6 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 47 ns | - | - |
| Typical Turn On Delay Time | 7.9 ns | - | - |
| Part # Aliases | BSB012N03LX3GXUMA1 SP000597846 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSB012N03LX3 G | MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3 | |
| BSB012N03LX3 | - Bulk (Alt: BSB012N03LX3) | ||
| BSB012N03LX3G | Trans MOSFET N-CH 30V 39A 7-Pin WDSON - Bulk (Alt: BSB012N03LX3G) | ||
| BSB012N03LX3GXUMA1 | - Bulk (Alt: BSB012N03LX3GXUMA1) | ||
Infineon Technologies |
BSB012N03LX3 G | RF Bipolar Transistors MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3 |