 |  | | |
| PartNumber | BSC014N03MS G | BSC014N03MS | BSC014N03MSG |
| Description | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | ||
| Manufacturer | Infineon | - | INFINEON |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 1.4 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 16 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 43 ns | - | - |
| Typical Turn On Delay Time | 32 ns | - | - |
| Part # Aliases | BSC014N03MSGATMA1 BSC14N3MSGXT SP000394681 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC014N03MS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | |
| BSC014N03MSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
Infineon Technologies |
BSC014N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSC014N03MS | 全新原裝 | ||
| BSC014N03MS G | Trans MOSFET N-CH 30V 30A 8-Pin TDSON T/R (Alt: BSC014N03MS G) | ||
| BSC014N03MSG | 全新原裝 | ||
| BSC014N03MSGATMA1 , TDA1 | 全新原裝 |