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| PartNumber | BSC026NE2LS5ATMA1 | BSC026NE2LS5 | BSC026NE2LS5ATMA1-CUT TAPE |
| Description | MOSFET LV POWER MOS | Trans MOSFET N-CH 25V PG-TDSON-8 T/R (Alt: BSC026NE2LS5) | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 82 A | - | - |
| Rds On Drain Source Resistance | 4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 29 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 5 | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 55 S | - | - |
| Fall Time | 2 ns | 2 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3 ns | 3 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | 13 ns | - |
| Typical Turn On Delay Time | 3 ns | 3 ns | - |
| Part # Aliases | BSC026NE2LS5 SP001212432 | - | - |
| Part Aliases | - | BSC026NE2LS5 SP001212432 | - |
| Package Case | - | TDSON-8 | - |
| Pd Power Dissipation | - | 29 W | - |
| Vgs Gate Source Voltage | - | +/- 16 V | - |
| Id Continuous Drain Current | - | 82 A | - |
| Vds Drain Source Breakdown Voltage | - | 25 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Rds On Drain Source Resistance | - | 4 mOhms | - |
| Qg Gate Charge | - | 12 nC | - |
| Forward Transconductance Min | - | 55 S | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC026NE2LS5ATMA1 | MOSFET LV POWER MOS | |
| BSC026NE2LS5ATMA1 | MOSFET LV POWER MOS | ||
| BSC026NE2LS5 | Trans MOSFET N-CH 25V PG-TDSON-8 T/R (Alt: BSC026NE2LS5) | ||
| BSC026NE2LS5ATMA1-CUT TAPE | 全新原裝 |