BSC030N04NS

BSC030N04NS G vs BSC030N04NSGXT vs BSC030N04NSGATMA1

 
PartNumberBSC030N04NS GBSC030N04NSGXTBSC030N04NSGATMA1
DescriptionMOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3MOSFET N-CH 40V 100A TDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance2.5 mOhms2.5 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge61 nC61 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation83 W83 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOS--
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min46 S46 S-
Fall Time5 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time4 ns4 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time23 ns23 ns-
Typical Turn On Delay Time16 ns16 ns-
Part # AliasesBSC030N04NSGATMA1 BSC3N4NSGXT SP000354811BSC030N04NS BSC030N04NSGATMA1 G SP000354811-
Unit Weight0.070548 oz--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC030N04NS G MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC030N04NSGXT MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC030N04NS G MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC030N04NSGATMA1 MOSFET N-CH 40V 100A TDSON-8
BSC030N04NS 全新原裝
BSC030N04NSG 40V,100A,N Channel Power MOSFET
BSC030N04NSGATMA1 , TDA7 全新原裝
Top