 | |  | |
| PartNumber | BSC036NE7NS3 G | BSC036NE7NS3GATMA1 | BSC036NE7NS3G |
| Description | MOSFET N-Ch 75V 100A TDSON-8 | MOSFET N-Ch 75V 100A TDSON-8 | POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 75V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
| Manufacturer | Infineon | Infineon | Infineo |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | PG-TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 3.6 mOhms | 3.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | 2.3 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 63.4 nC | 63.4 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 156 W | 156 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | BSC036NE7 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 50 S | 50 S | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 18 ns | 18 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 38 ns | 38 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | BSC036NE7NS3GATMA1 BSC36NE7NS3GXT SP000907920 | BSC036NE7NS3 BSC36NE7NS3GXT G SP000907920 | - |
| Part Aliases | - | - | BSC036NE7NS3 BSC036NE7NS3GXT G SP000907920 |
| Package Case | - | - | TDSON-8 |
| Id Continuous Drain Current | - | - | 100 A |
| Vds Drain Source Breakdown Voltage | - | - | 75 V |
| Rds On Drain Source Resistance | - | - | 3.6 mOhms |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC036NE7NS3 G | MOSFET N-Ch 75V 100A TDSON-8 | |
| BSC036NE7NS3GATMA1 | MOSFET N-Ch 75V 100A TDSON-8 | ||
| BSC036NE7NS3GATMA1 | MOSFET N-Ch 75V 100A TDSON-8 | ||
| BSC036NE7NS3GXT | Trans MOSFET N-CH 75V 20A 8-Pin TDSON - Tape and Reel (Alt: BSC036NE7NS3GATMA1) | ||
| BSC036NE7NS3 G | Trans MOSFET N-CH 75V 20A 8-Pin TDSON T/R (Alt: BSC036NE7NS3 G) | ||
| BSC036NE7NS3G | POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 75V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |