PartNumber | BSC059N04LS6ATMA1 | BSC059N04LS G | BSC059N04LSGATMA1 |
Description | MOSFET | MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3 | MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 59 A | 73 A | 73 A |
Rds On Drain Source Resistance | 5.9 mOhms | 4.9 mOhms | 4.9 mOhms |
Vgs th Gate Source Threshold Voltage | 1.3 V | 1.2 V | 1.2 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 9.4 nC | 40 nC | 40 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 38 W | 50 W | 50 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 100 S | 48 S | 48 S |
Fall Time | 2 ns | 3.8 ns | 3.8 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 1.2 ns | 3.4 ns | 3.4 ns |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 8 ns | 23 ns | 23 ns |
Typical Turn On Delay Time | 3 ns | 5.6 ns | 5.6 ns |
Tradename | - | OptiMOS | OptiMOS |
Height | - | 1.27 mm | 1.27 mm |
Length | - | 5.9 mm | 5.9 mm |
Series | - | OptiMOS 3 | OptiMOS 3 |
Width | - | 5.15 mm | 5.15 mm |
Part # Aliases | - | BSC059N04LSGATMA1 BSC59N4LSGXT SP000391499 | BSC059N04LS BSC59N4LSGXT G SP000391499 |
Unit Weight | - | 0.003527 oz | 0.005256 oz |