BSC072N03LDG

BSC072N03LDGATMA1 vs BSC072N03LDG vs BSC072N03LDGATMA1-CUT TAPE

 
PartNumberBSC072N03LDGATMA1BSC072N03LDGBSC072N03LDGATMA1-CUT TAPE
DescriptionMOSFET N-Ch 30V 20A TDSON-8 OptiMOS 330V,20A,Dual N-channel power MOSFET,logic level
ManufacturerInfineonINFINEON-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance6 mOhms, 6 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge41 nC, 41 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation57 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type2 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min28 S, 28 S--
Fall Time4 ns, 4 ns--
Product TypeMOSFET--
Rise Time4 ns, 4 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns, 25 ns--
Typical Turn On Delay Time6 ns, 6 ns--
Part # AliasesBSC072N03LD BSC72N3LDGXT G SP000359607--
Unit Weight0.003425 oz--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC072N03LDGATMA1 MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
BSC072N03LDGATMA1 MOSFET 2N-CH 30V 11.5A 8TDSON
BSC072N03LDG 30V,20A,Dual N-channel power MOSFET,logic level
BSC072N03LDGATMA1-CUT TAPE 全新原裝
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