 |  | |
| PartNumber | BSC077N12NS3GATMA1 | BSC077N12NS3G |
| Description | MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3 | MOSFET N-CHANNEL 120V 13.4A TDSON8EP, EA |
| Manufacturer | Infineon | |
| Product Category | MOSFET | FETs - Single |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | PG-TDSON-8 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 120 V | - |
| Id Continuous Drain Current | 98 A | - |
| Rds On Drain Source Resistance | 7.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 66 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 139 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | - |
| Packaging | Reel | - |
| Height | 1.27 mm | - |
| Length | 5.9 mm | - |
| Series | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 5.15 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 40 S | - |
| Fall Time | 7 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 8 ns | - |
| Factory Pack Quantity | 5000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 26 ns | - |
| Typical Turn On Delay Time | 15 ns | - |
| Part # Aliases | BSC077N12NS3 BSC77N12NS3GXT G SP000652750 | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC077N12NS3GATMA1 | MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3 | |
| BSC077N12NS3GATMA1 | MOSFET N-CH 120V 98A 8TDSON | ||
| BSC077N12NS3G | MOSFET N-CHANNEL 120V 13.4A TDSON8EP, EA |