BSC084P03NS3G

BSC084P03NS3GATMA1 vs BSC084P03NS3G vs BSC084P03NS3GATMA1 , TDM

 
PartNumberBSC084P03NS3GATMA1BSC084P03NS3GBSC084P03NS3GATMA1 , TDM
DescriptionMOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3MOSFET, P-CH, -30V, -78.6A, TDSON
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current78.6 A--
Rds On Drain Source Resistance6.1 mOhms--
Vgs th Gate Source Threshold Voltage3.1 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge58 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation69 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
SeriesBSC084P03BSC084P03-
Transistor Type1 P-Channel1 P-Channel-
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min33 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time134 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesBSC084P03NS3 BSC84P3NS3GXT G SP000473020--
Unit Weight0.016014 oz--
Part Aliases-BSC084P03NS3 BSC084P03NS3GXT G SP000473020-
Package Case-TDSON-8-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC084P03NS3GATMA1 MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
BSC084P03NS3GATMA1 MOSFET P-CH 30V 14.9A TDSON-8
BSC084P03NS3G MOSFET, P-CH, -30V, -78.6A, TDSON
BSC084P03NS3GATMA1 , TDM 全新原裝
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