BSC123N08N

BSC123N08NS3 G vs BSC123N08NS3GATMA1

 
PartNumberBSC123N08NS3 GBSC123N08NS3GATMA1
DescriptionMOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTDSON-8PG-TDSON-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V
Id Continuous Drain Current55 A55 A
Rds On Drain Source Resistance10.3 mOhms12.3 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage20 V10 V
Qg Gate Charge25 nC19 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation66 W66 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height1.27 mm1.27 mm
Length5.9 mm5.9 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min22 S22 S
Fall Time4 ns4 ns
Product TypeMOSFETMOSFET
Rise Time18 ns18 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time19 ns19 ns
Typical Turn On Delay Time12 ns12 ns
Part # AliasesBSC123N08NS3GATMA1 BSC123N8NS3GXT SP000443916BSC123N08NS3 BSC123N8NS3GXT G SP000443916
Unit Weight0.003527 oz0.006067 oz
Development Kit-EVAL_1K4W_ZVS_FB_CFD7
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC123N08NS3 G MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
BSC123N08NS3GATMA1 MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
BSC123N08NS3 G Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP
BSC123N08NS3GATMA1 MOSFET N-CH 80V 55A TDSON-8
BSC123N08NS3GXT Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1)
BSC123N08NS3GATMA1 , TDZ 全新原裝
BSC123N08N 全新原裝
BSC123N08NS3 全新原裝
BSC123N08NS3G Trans MOSFET N-CH 80V 11A 8-Pin TDSON (Alt: BSC123N08NS3 G)
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