BSC123N10LS stock, BSC123N10LS, BSC123N10LS G


PartNumber	BSC123N10LS G	BSC123N10LSGATMA1
Description	MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2	MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TDSON-8	TDSON-8
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	100 V
Id Continuous Drain Current	71 A	71 A
Rds On Drain Source Resistance	10 mOhms	10 mOhms
Vgs th Gate Source Threshold Voltage	1.2 V	1.2 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	68 nC	68 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	114 W	114 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	1.27 mm	1.27 mm
Length	5.9 mm	5.9 mm
Series	OptiMOS 2	OptiMOS 2
Transistor Type	1 N-Channel	1 N-Channel
Width	5.15 mm	5.15 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	49 S	49 S
Fall Time	7 ns	7 ns
Product Type	MOSFET	MOSFET
Rise Time	25 ns	25 ns
Factory Pack Quantity	5000	5000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	41 ns	41 ns
Typical Turn On Delay Time	18 ns	18 ns
Part # Aliases	BSC123N10LSGATMA1 BSC123N1LSGXT SP000379612	BSC123N10LS BSC123N1LSGXT G SP000379612
Unit Weight	-	0.005855 oz

Search Part Number : "BSC123N10LS", Match & Start with "BSC123N10LS" - Total : 8

製造商	型號	描述
Infineon Technologies	BSC123N10LS G	MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
	BSC123N10LSGATMA1	MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
	BSC123N10LSGATMA1	MOSFET N-CH 100V 71A TDSON-8
	BSC123N10LS G	RF Bipolar Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
	BSC123N10LS	全新原裝
	BSC123N10LSG	Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP
	BSC123N10LS G	全新原裝
	BSC123N10LSGATMA1 , TDZ7	全新原裝

BSC123N10LS