 |  |  | |
| PartNumber | BSC16DN25NS3 G | BSC16DN25NS3G | BSC16DN25NS3GATMA1 |
| Description | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | MOSFET N-CH 250V 10.9A 8TDSON | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 10.9 A | - | - |
| Rds On Drain Source Resistance | 165 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 62.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 7 S | - | - |
| Fall Time | 4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | BSC16DN25NS3GATMA1 BSC16DN25NS3GXT SP000781782 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC16DN25NS3 G | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | |
| BSC16DN25NS3GATMA1 | MOSFET N-CH 250V 10.9A 8TDSON | ||
| BSC16DN25NS3 G | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | ||
| BSC16DN25NS3G | 全新原裝 | ||
| BSC16DN25NS3GCT-ND | 全新原裝 |