| PartNumber | BSC220N20NSFDATMA1 | BSC22DN20NS3GATMA1 | BSC22DN20NS3 G |
| Description | MOSFET | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
| Id Continuous Drain Current | 52 A | 7 A | 7 A |
| Rds On Drain Source Resistance | 22 mOhms | 194 mOhms | 194 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 43 nC | 5.6 nC | 5.6 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 214 W | 34 W | 34 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | Optimos 3 | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Series | BSC220N | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 44 S | 3.5 S | 3.5 S |
| Fall Time | 10 ns | 3 ns | 3 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 7 ns | 4 ns | 4 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28 ns | 6 ns | 6 ns |
| Typical Turn On Delay Time | 7 ns | 4 ns | 4 ns |
| Part # Aliases | SP001795096 | BSC22DN20NS3 BSC22DN2NS3GXT G SP000781778 | BSC22DN20NS3GATMA1 BSC22DN2NS3GXT SP000781778 |
| Height | - | 1.27 mm | 1.27 mm |
| Length | - | 5.9 mm | 5.9 mm |
| Width | - | 5.15 mm | 5.15 mm |