 |  | | |
| PartNumber | BSD314SPEH6327XTSA1 | BSD314SPEH6327 | BSD314SPEH6327XT |
| Description | MOSFET P-Ch 30V -1.5A SOT-363-3 | -30V,-1.5A,P-Ch Small-Signal MOSFET | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 1.5 A | - | - |
| Rds On Drain Source Resistance | 230 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | - 700 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Reel |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Series | BSD314 | - | BSD314 |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Width | 1.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 3 S | - | - |
| Fall Time | 2.8 ns | - | 2.8 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 3.9 ns | - | 3.9 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.4 ns | - | 12.4 ns |
| Typical Turn On Delay Time | 5.1 ns | - | 5.1 ns |
| Part # Aliases | BSD314SPE BSD314SPEH6327XT H6327 SP000917658 | - | - |
| Unit Weight | 0.000265 oz | - | 0.000265 oz |
| Part Aliases | - | - | BSD314SPE BSD314SPEH6327XT H6327 SP000917658 |
| Package Case | - | - | SOT-363-6 |
| Pd Power Dissipation | - | - | 500 mW |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | - 1.5 A |
| Vds Drain Source Breakdown Voltage | - | - | - 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 2 V |
| Rds On Drain Source Resistance | - | - | 230 mOhms |
| Qg Gate Charge | - | - | - 0.7 nC |
| Forward Transconductance Min | - | - | 3 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSD314SPEH6327XTSA1 | MOSFET P-Ch 30V -1.5A SOT-363-3 | |
| BSD314SPEH6327XTSA1 | IGBT Transistors MOSFET P-Ch 30V -1.5A SOT-363-3 | ||
| BSD314SPEH6327 | -30V,-1.5A,P-Ch Small-Signal MOSFET | ||
| BSD314SPEH6327XT | 全新原裝 |