BSD840NH6327X

BSD840NH6327XTSA1 vs BSD840NH6327XT vs BSD840NH6327XTSA1-CUT TAPE

 
PartNumberBSD840NH6327XTSA1BSD840NH6327XTBSD840NH6327XTSA1-CUT TAPE
DescriptionMOSFET N-Ch 20V 880mA SOT-363-6MOSFET N-Ch 20V 880mA SOT-363-6
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6SOT-363-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current880 mA880 mA-
Rds On Drain Source Resistance400 mOhms270 mOhms, 270 mOhms-
Vgs th Gate Source Threshold Voltage300 mV300 mV-
Vgs Gate Source Voltage2.5 V8 V-
Qg Gate Charge0.26 nC260 pC, 260 pC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation500 mW500 mW (1/2 W)-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Height0.9 mm0.9 mm-
Length2 mm2 mm-
SeriesBSD840BSD840-
Transistor Type2 N-Channel2 N-Channel-
Width1.25 mm1.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min2.5 S2.5 S, 2.5 S-
Fall Time0.9 ns900 ps, 900 ps-
Product TypeMOSFETMOSFET-
Rise Time2.2 ns2.2 ns, 2.2 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time7.8 ns7.8 ns, 7.8 ns-
Typical Turn On Delay Time1.9 ns1.9 ns, 1.9 ns-
Part # AliasesBSD840N BSD84NH6327XT H6327 SP000917654BSD840NH6327XTSA1 SP000917654-
Unit Weight0.000265 oz0.000265 oz-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
BSD840NH6327XTSA1 MOSFET N-Ch 20V 880mA SOT-363-6
BSD840NH6327XT MOSFET N-Ch 20V 880mA SOT-363-6
BSD840NH6327XTSA1 MOSFET 2N-CH 20V 0.88A SOT363
BSD840NH6327XTSA1-CUT TAPE 全新原裝
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