 |  | |
| PartNumber | BSL308CH6327XTSA1 | BSL308CH6327 |
| Description | MOSFET SMALL SIGNAL+P-CH | |
| Manufacturer | Infineon | Infineon Technologies |
| Product Category | MOSFET | FETs - Arrays |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | - |
| Number of Channels | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel, P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 2 A, 2.3 A | - |
| Rds On Drain Source Resistance | 130 mOhms, 93 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V, 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | - 1.2 nC, 650 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 0.5 W | - |
| Configuration | Single | Dual |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Tape & Reel (TR) |
| Height | 1.1 mm | - |
| Length | 3 mm | - |
| Transistor Type | 1 P-Channel, 1 N-Channel | 1 P-Channel |
| Width | 1.5 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 4.6 S, 5 S | - |
| Fall Time | 2.8 ns. 1.4 ns | 2.8 ns. 1.4 ns |
| Product Type | MOSFET | - |
| Rise Time | 7.7 ns, 2.3 ns | 7.7 ns 2.3 ns |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 15.3 ns, 8.3 ns | 15.3 ns 8.3 ns |
| Typical Turn On Delay Time | 5.6 ns, 4.4 ns | 5.6 ns 4.4 ns |
| Part # Aliases | BSL308C H6327 SP001101002 | - |
| Series | - | Automotive, AEC-Q101, OptiMOS |
| Part Aliases | - | BSL308C H6327 SP001101002 |
| Package Case | - | SC-74, SOT-457 |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount |
| Supplier Device Package | - | PG-TSOP6-6 |
| FET Type | - | N and P-Channel Complementary |
| Power Max | - | 500mW |
| Drain to Source Voltage Vdss | - | 30V |
| Input Capacitance Ciss Vds | - | 275pF @ 15V |
| FET Feature | - | Logic Level Gate, 4.5V Drive |
| Current Continuous Drain Id 25°C | - | 2.3A, 2A |
| Rds On Max Id Vgs | - | 57 mOhm @ 2.3A, 10V |
| Vgs th Max Id | - | 2V @ 11μA |
| Gate Charge Qg Vgs | - | 1.5nC @ 10V |
| Pd Power Dissipation | - | 500 mW |
| Vgs Gate Source Voltage | - | +/- 20 V |
| Id Continuous Drain Current | - | -2 A 2.3 A |
| Vds Drain Source Breakdown Voltage | - | - 30 V 30 V |
| Vgs th Gate Source Threshold Voltage | - | - 2 V 1.2 V |
| Rds On Drain Source Resistance | - | 130 mOhms 93 mOhms |
| Qg Gate Charge | - | - 1.2 nC 0.65 nC |
| Forward Transconductance Min | - | 4.6 S 5 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSL308CH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSL308CH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSL308CH6327 | 全新原裝 |