 | | | |
| PartNumber | BSO612CV G | BSO612CV | BSO612CVGHUMA1 |
| Description | MOSFET N and P-Ch 60V 3A, -2A DSO-8 | MOSFET N and P-Ch 60V 3A DSO-8 | MOSFET SMALL SIGNAL+P-CH |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | N | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 3 A | 3 A | - |
| Rds On Drain Source Resistance | 120 mOhms | 120 mOhms, 300 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | 2 W | - |
| Configuration | Dual | Dual | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | SIPMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.75 mm | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm | 4.9 mm |
| Series | BSO612 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | 1 P-Channel |
| Width | 3.9 mm | 3.9 mm | 3.9 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 1.2 S | 4 S / 2 S | - |
| Fall Time | 30 ns, 95 ns | 30 ns, 95 ns | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 35 ns, 60 ns | 35 ns, 60 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns, 145 ns | 25 ns, 145 ns | - |
| Typical Turn On Delay Time | 12 ns, 15 ns | 12 ns, 15 ns | - |
| Part # Aliases | BSO612CVGHUMA1 BSO612CVGXT SP000216307 | - | BSO612CV BSO612CVGXT G SP000216307 |
| Unit Weight | 0.019048 oz | 0.019048 oz | 0.019048 oz |
| Type | - | SIPMOS Small Signal Transistor | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSO612CV G | MOSFET N and P-Ch 60V 3A, -2A DSO-8 | |
| BSO612CV | MOSFET N/P-CH 60V 3A/2A 8SOIC | ||
| BSO612CVGHUMA1 | MOSFET N/P-CH 60V 2A 8-SOIC | ||
Infineon Technologies |
BSO612CV | MOSFET N and P-Ch 60V 3A DSO-8 | |
| BSO612CVGHUMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSO612CV G | MOSFET N and P-Ch 60V 3A, -2A DSO-8 | ||
| BSO612CVG | Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET |