 |  | |
| PartNumber | BSP295H6327XTSA1 | BSP295H6327 |
| Description | MOSFET N-Ch 60V 1.8A SOT-223-3 | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | - |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 1.8 A | - |
| Rds On Drain Source Resistance | 300 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 14 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1.8 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.6 mm | - |
| Length | 6.5 mm | - |
| Series | BSP295 | BSP295 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.5 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 0.8 S | - |
| Fall Time | 19 ns | 19 ns |
| Product Type | MOSFET | - |
| Rise Time | 9.9 ns | 9.9 ns |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 27 ns | 27 ns |
| Typical Turn On Delay Time | 5.4 ns | 5.4 ns |
| Part # Aliases | BSP295 H6327 SP001058618 | - |
| Unit Weight | 0.003951 oz | 0.008826 oz |
| Part Aliases | - | BSP295 H6327 SP001058618 |
| Package Case | - | SOT-223-4 |
| Pd Power Dissipation | - | 1.8 W |
| Vgs Gate Source Voltage | - | 20 V |
| Id Continuous Drain Current | - | 1.8 A |
| Vds Drain Source Breakdown Voltage | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | 1.1 V |
| Rds On Drain Source Resistance | - | 220 mOhms |
| Qg Gate Charge | - | 14 nC |
| Forward Transconductance Min | - | 0.8 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP295H6327XTSA1 | MOSFET N-Ch 60V 1.8A SOT-223-3 | |
| BSP295H6327 | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Infineon Technologies |
BSP295H6327XTSA1 | MOSFET N-CH 60V 1.8A SOT223 |