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| PartNumber | BSP297H6327XTSA1 | BSP297H6327 | BSP297H6327XTSA1/SN |
| Description | MOSFET N-Ch 200V 660mA SOT-223-3 | 200V,0.66A,N-Ch Small-Signal MOSFET | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 660 mA | - | - |
| Rds On Drain Source Resistance | 1.8 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 12.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP297 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 470 mS | - | - |
| Fall Time | 19 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.8 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 49 ns | - | - |
| Typical Turn On Delay Time | 5.2 ns | - | - |
| Part # Aliases | BSP297 H6327 SP001058622 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP297H6327XTSA1 | MOSFET N-Ch 200V 660mA SOT-223-3 | |
| BSP297H6327XTSA1 | MOSFET N-CH 200V 660MA SOT-223 | ||
| BSP297H6327 | 200V,0.66A,N-Ch Small-Signal MOSFET | ||
| BSP297H6327XTSA1/SN | 全新原裝 |