 | |  | |
| PartNumber | BSP299L3627 | BSP299L6327 | BSP299L6327HUSA1 |
| Description | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | MOSFET N-CH 500V 400MA SOT-223 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| BSP299L3627 | 全新原裝 | ||
| BSP299L6327 | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP299L6327XT | 全新原裝 | ||
Infineon Technologies |
BSP299L6327HUSA1 | MOSFET N-CH 500V 400MA SOT-223 |