 |  | | |
| PartNumber | BSP372N H6327 | BSP372N | BSP372NH6327 |
| Description | MOSFET SMALL SIGNAL N-CH | ||
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1.8 A | - | - |
| Rds On Drain Source Resistance | 153 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 14.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP372 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 5.1 S | - | - |
| Fall Time | 18 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6.7 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 47.3 ns | - | - |
| Typical Turn On Delay Time | 5.1 ns | - | - |
| Part # Aliases | BSP372NH6327XTSA1 SP001059326 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP372NH6327XTSA1 | MOSFET SMALL SIGNAL N-CH | |
| BSP372N H6327 | MOSFET SMALL SIGNAL N-CH | ||
| BSP372NH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL N-CH | ||
| BSP372N | 全新原裝 | ||
| BSP372N H6327 | MOSFET SMALL SIGNAL N-CH | ||
| BSP372NH6327 | 全新原裝 | ||
| BSP372NH6327XTSA1-CUT TAPE | 全新原裝 |