 | | |
| PartNumber | BSS192PH6327FTSA1 | BSS192PH6327XTSA1 |
| Description | MOSFET P-Ch -250V -190mA SOT-89-3 | MOSFET SMALL SIGNAL+P-CH |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PG-SOT-89-3 | SOT-89-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V |
| Id Continuous Drain Current | 190 mA | 190 mA |
| Rds On Drain Source Resistance | 12 Ohms | 20 Ohms |
| Vgs th Gate Source Threshold Voltage | 1 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 20 V |
| Qg Gate Charge | - 4.9 nC | - 200 pC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1 W | 1 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.5 mm | 1.5 mm |
| Length | 4.5 mm | 4.5 mm |
| Series | BSS192 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Width | 2.5 mm | 2.5 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 190 mS | 0.38 S |
| Fall Time | 50 ns | 50 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 5.2 ns | 5.2 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 72 ns | 72 ns |
| Typical Turn On Delay Time | 4.7 ns | 4.7 ns |
| Part # Aliases | BSS192P H6327 SP001047642 | BSS192P H6327 SP001195030 |
| Unit Weight | 0.004603 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS192PH6327FTSA1 | MOSFET P-Ch -250V -190mA SOT-89-3 | |
| BSS192PH6327FTSA1 | MOSFET P-CH 250V 0.19A SOT-89 | ||
| BSS192PH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
Infineon Technologies |
BSS192PH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH |