 |  | | |
| PartNumber | BSS209PWH6327XTSA1 | BSS209PWH6327 | BSS209PWH6327XTSA1INFINE |
| Description | MOSFET P-Ch -20V -630mA SOT-323-3 | INFINEON TRANS BSS209PWH6327XTSA1, RL | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 630 mA | - | - |
| Rds On Drain Source Resistance | 550 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | - 1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Series | BSS209 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 870 mS | - | - |
| Fall Time | 4.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 6 ns | - | - |
| Typical Turn On Delay Time | 2.6 ns | - | - |
| Part # Aliases | BSS209PW BSS29PWH6327XT H6327 SP000750498 | - | - |
| Unit Weight | 0.000176 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS209PWH6327XTSA1 | MOSFET P-Ch -20V -630mA SOT-323-3 | |
| BSS209PWH6327XTSA1 | MOSFET P-CH 20V 0.63A SOT-323 | ||
| BSS209PWH6327 | INFINEON TRANS BSS209PWH6327XTSA1, RL | ||
| BSS209PWH6327XTSA1INFINE | 全新原裝 |