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| PartNumber | BSS316N H6327 | BSS316NH6327XTSA1 | BSS316NH6327XT |
| Description | MOSFET N-Ch 30V 1.4A SOT-23-3 | MOSFET N-Ch 30V 1.4A SOT-23-3 | MOSFET N-Ch 30V 1.4A SOT-23-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 1.4 A | 1.4 A | 1.4 A |
| Rds On Drain Source Resistance | 119 mOhms | 119 mOhms | 160 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
| Qg Gate Charge | 600 pC | 600 pC | 600 pC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Series | BSS316 | BSS316 | BSS316 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 1.3 mm | 1.3 mm | 1.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 2.3 S | 2.3 S | 2.3 S |
| Fall Time | 1 ns | 1 ns | 1 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.3 ns | 2.3 ns | 2.3 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 5.8 ns | 5.8 ns | 5.8 ns |
| Typical Turn On Delay Time | 3.4 ns | 3.4 ns | 3.4 ns |
| Part # Aliases | BSS316NH6327XT BSS316NH6327XTSA1 SP000928948 | BSS316N BSS316NH6327XT H6327 SP000928948 | BSS316N BSS316NH6327XTSA1 H6327 SP000928948 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Development Kit | - | - | EVAL_3KW_2LLC_C7_20 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS316N H6327 | MOSFET N-Ch 30V 1.4A SOT-23-3 | |
| BSS316NH6327XTSA1 | MOSFET N-Ch 30V 1.4A SOT-23-3 | ||
| BSS316NH6327XT | MOSFET N-Ch 30V 1.4A SOT-23-3 | ||
| BSS316NH6327XTSA1 | MOSFET N-CH 30V 1.4A SOT23 | ||
| BSS316NL6327HTSA1 | MOSFET N-CH 30V 1.4A SOT-23 | ||
| BSS316N | 全新原裝 | ||
| BSS316N H6327 | Trans MOSFET N-CH 30V 1.4A 3-Pin SOT-23 T/R | ||
| BSS316NH6327 | 全新原裝 | ||
| BSS316NH6327XTSA1-CUT TAPE | 全新原裝 |