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| PartNumber | BSS806NH6327XTSA1 | BSS806NH6327 |
| Description | MOSFET N-Ch 20V 2.3A SOT-23-3 | 20V,57m��,2.3A,N-Ch Small-Signal MOSFET |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 2.3 A | - |
| Rds On Drain Source Resistance | 41 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | - |
| Vgs Gate Source Voltage | 8 V | - |
| Qg Gate Charge | 1.7 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | - |
| Height | 1.1 mm | - |
| Length | 2.9 mm | - |
| Series | BSS806 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 1.3 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 9 S | - |
| Development Kit | - | - |
| Fall Time | 3.7 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 9.9 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 12 ns | - |
| Typical Turn On Delay Time | 7.5 ns | - |
| Part # Aliases | BSS806N BSS86NH6327XT H6327 SP000928952 | - |
| Unit Weight | 0.000282 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS806NH6327XTSA1 | MOSFET N-Ch 20V 2.3A SOT-23-3 | |
| BSS806NH6327XTSA1 | MOSFET N-CH 20V 2.3A SOT23 | ||
| BSS806NH6327 | 20V,57m��,2.3A,N-Ch Small-Signal MOSFET |