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| PartNumber | BSZ100N06LS3 G | BSZ100N06LS3 | BSZ100N06LS3G |
| Description | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | ||
| Manufacturer | Infineon | Infineon Technologies | infineon |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 7.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 45 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | OptiMOS 3 | OptiMOS | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 20 S | - | - |
| Fall Time | 8 ns | 8 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 58 ns | 58 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns | 19 ns | - |
| Typical Turn On Delay Time | 8 ns | 8 ns | - |
| Part # Aliases | BSZ100N06LS3GATMA1 BSZ1N6LS3GXT SP000453672 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Part Aliases | - | BSZ100N06LS3GATMA1 BSZ100N06LS3GXT SP000453672 | - |
| Package Case | - | 8-PowerVDFN | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PG-TSDSON-8 (3.3x3.3) | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 50W | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 3500pF @ 30V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 11A (Ta), 20A (Tc) | - |
| Rds On Max Id Vgs | - | 10 mOhm @ 20A, 10V | - |
| Vgs th Max Id | - | 2.2V @ 23μA | - |
| Gate Charge Qg Vgs | - | 45nC @ 10V | - |
| Pd Power Dissipation | - | 2.1 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 20 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 10 mOhms | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ100N06LS3 G | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | |
| BSZ100N06LS3GATMA1 | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | ||
| BSZ100N06LS3GATMA1 | MOSFET N-CH 60V 20A TSDSON-8 | ||
| BSZ100N06LS3 | 全新原裝 | ||
| BSZ100N06LS3 G | BSZ100N06LS3 G | ||
| BSZ100N06LS3G | 全新原裝 | ||
| BSZ100N06LS3GATMA | 全新原裝 |